ELECTRON-TRANSPORT IN SUB-MICRON GAAS-CHANNELS AT 300-K

被引：10
作者：
NAG, BR [1 ]
ROY, MD [1 ]
机构：
[1] JADAVPUR UNIV, DEPT PHYS, CALCUTTA 700032, W BENGAL, INDIA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 02期
关键词：
D O I：
10.1007/BF00616306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：65 / 70
页数：6
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