SWITCHING PROPERTIES OF VACUUM-DEPOSITED P-GE-N-GAAS HETEROJUNCTIONS

被引：0

作者：

RYBKA, V ^{[1
]}

KREJCI, P ^{[1
]}

SEVCIK, Z ^{[1
]}

机构：

[1] TESLA, POPOV RES INST RADIOCOMMUN, PRAGUE, CZECHOSLOVAKIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1975年 / 29卷 / 02期

关键词：

D O I：

10.1002/pssa.2210290259

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K175 / K176

页数：2

共 4 条

[1] STUDY OF CURRENT TRANSMISSION IN GE-GAAS P-N HETEROJUNCTIONS
RYBKA, V
KREJCI, P
SEVCIK, Z
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 28 (02): : 455 - 460
[2] SOME ELECTRICAL PROPERTIES OF EPITAXIAL GERMANIUM FILMS DEPOSITED ON SEMI-INSULATING GALLIUM-ARSENIDE SUBSTRATE
RYBKA, V
SEVCIK, Z
DUDROVA, E
KREJCI, P
[J]. THIN SOLID FILMS, 1972, 9 (01) : 83 - &
[3] STRUCTURE OF VACUUM EVAPORATED GE FILMS ON GAAS SUBSTRATES
RYBKA, V
DUDROVA, E
SEVCIK, Z
KREJCI, P
[J]. THIN SOLID FILMS, 1971, 8 (01) : R7 - &
[4] TANSLEY TL, 1971, SEMICONDUCTORS SEM A, V7, P293