ELECTRON-HOLE SCATTERING AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON AT HIGH EXCITATION RATES

被引：0

作者：

VAITKUS, Y ^{[1
]}

GRIVITSKAS, V ^{[1
]}

STORASTA, Y ^{[1
]}

机构：

[1] V KAPSUKAS STATE UNIV,VILNIUS,LISSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：883 / 886

页数：4

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