ELECTRON-HOLE SCATTERING AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON AT HIGH EXCITATION RATES

被引：0
|
作者：
VAITKUS, Y [1 ]
GRIVITSKAS, V [1 ]
STORASTA, Y [1 ]
机构：
[1] V KAPSUKAS STATE UNIV,VILNIUS,LISSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 07期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：883 / 886
页数：4
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