HIGH-SPEED INP/INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH SUPPRESSED COLLECTOR CURRENT BLOCKING

被引：22
|
作者：
KURISHIMA, K
NAKAJIMA, H
KOBAYASHI, T
MATSUOKA, Y
ISHIBASHI, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期
关键词：
D O I：
10.1063/1.109368
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InP/InGaAs double-heterostructure bipolar transistors (DHBTs), incorporating a new collector structure featuring ''pn pair doping'' in the heterointerface vicinity, have been fabricated using a low-pressure metalorganic chemical vapor deposition (MOCVD) method. These transistors provide high collector current densities over 1 X 10(5) A/cm2, indicating the successful suppression of current blocking. S-parameter measurements determine the high current gain cutoff frequencies of 130 GHz. These values favorably compare with those of conventional InGaAs-collector HBTs fabricated for comparison, suggesting that the InP collectors have excellent electron transport properties.
引用
收藏
页码：2372 / 2374
页数：3
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