LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF METALS FOR MICROELECTRONICS TECHNOLOGY

被引:52
作者
BAUM, TH
COMITA, PB
机构
[1] IBM Almaden Research Center, San Jose, CA 95120-6099
关键词
D O I
10.1016/0040-6090(92)90907-S
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Laser-induced chemical vapor deposition of high-purity metals has been applied to a wide variety of microelectronics applications. The ability to selectively produce thin metallic films with good electrical properties, in a well defined and controlled manner, has been a major goal of research in this area. An understanding of the laser deposition process, such as the laser-surface interaction and the decomposition chemistry of the metal precursor, is critical. In recent years, a greater understanding of the fundamental processes has been gained and great progress has been made in the design and optimization of precursors for the deposition of high-purity metals. The ability to deposit conducting metals has enabled specific applications to be addressed. The most promising applications are the laser-induced repair of "open" circuit defects, laser-induced deposition of interconnects for customization of circuits and the repair of "clear" defects in lithographic masks. Further, using laser-induced deposition for the testing of early engineering designs and the customization of limited-volume microelectronic components may provide a cost-effective alternative to conventional lithographic processes.
引用
收藏
页码:80 / 94
页数:15
相关论文
共 163 条
[71]   NUCLEATION CONSIDERATIONS IN THE WAVELENGTH-DEPENDENT ACTIVATION SELECTIVITY OF ALUMINUM CHEMICAL-VAPOR DEPOSITION [J].
HIGASHI, GS ;
BLONDER, GE ;
FLEMING, CG ;
MCCRARY, VR ;
DONNELLY, VM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1441-1443
[72]   VIBRATIONAL SPECTROSCOPY OF GROWTH SURFACES DURING PHOTOCHEMICAL DEPOSITION OF ALUMINUM FROM TRIMETHYLALUMINUM VAPOR [J].
HIGASHI, GS ;
ROTHBERG, LJ ;
FLEMING, CG .
CHEMICAL PHYSICS LETTERS, 1985, 115 (02) :167-172
[74]  
HOLLOWAY K, 1991, MATER RES SOC SYMP P, V204, P409
[75]   LASER CHEMICAL VAPOR-DEPOSITION OF COPPER [J].
HOULE, FA ;
JONES, CR ;
BAUM, T ;
PICO, C ;
KOVAC, CA .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :204-206
[76]   SURFACE PROCESSES LEADING TO CARBON CONTAMINATION OF PHOTOCHEMICALLY DEPOSITED COPPER-FILMS [J].
HOULE, FA ;
WILSON, RJ ;
BAUM, TH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2452-2458
[77]   BASIC MECHANISMS IN LASER ETCHING AND DEPOSITION [J].
HOULE, FA .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04) :315-330
[78]   KINETICS AND MECHANISM OF LASER-INDUCED PHOTOCHEMICAL DEPOSITION FROM THE GROUP-6 HEXACARBONYLS [J].
JACKSON, RL ;
TYNDALL, GW .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :2092-2102
[79]   REPAIR OF TRANSPARENT DEFECTS ON PHOTOMASKS BY LASER-INDUCED METAL-DEPOSITION FROM AN AQUEOUS-SOLUTION [J].
JACOBS, JWM ;
NILLESEN, CJCM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :635-642
[80]   CHEMICAL VAPOR-DEPOSITION OF COPPER FROM (HEXAFLUOROACETYLACETONATO)(ALKYNE)-COPPER(I) COMPLEXES VIA DISPROPORTIONATION [J].
JAIN, A ;
CHI, KM ;
KODAS, TT ;
HAMPDENSMITH, MJ ;
FARR, JD ;
PAFFETT, MF .
CHEMISTRY OF MATERIALS, 1991, 3 (06) :995-997