ELECTRONIC-STRUCTURE OF ZNS/ZNSE SUPERLATTICES

被引：24

作者：

CHRISTENSEN, NE

GORCZYCA, I

机构：

[1] RECHZENTRUM GARCHING, INST PLASMA PHYS, GARCHING, GERMANY

[2] HOCHSTLEISTUNGSRECH ZENTRUM WISSENSCH & FORSCH, JULICH, GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.44.1707

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio electronic-structure calculations for ZnS/ZnSe (001) and (110) strained-layer superlattices are used to derive valence-band offsets at the interfaces and "absolute" deformation potentials of the constituent compounds. The calculated offset values depend sensitively on the assumed details of the structure (atomic positions) in the interface region. Bands of interface states are identified, and it was found that the dispersion and energy range of these also depend on structural details act the interfaces.

引用

页码：1707 / 1716

页数：10

共 41 条

[1] LINEAR METHODS IN BAND THEORY [J].

ANDERSEN, OK .

PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083

[2]

ANDERSON OP, UNPUB

[3]

[Anonymous], ELECTRONIC STRUCTURE

[4] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[5] MEAN-VALUE POINT IN BRILLOUIN ZONE [J].

BALDERESCHI, A .

PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215

[6]

BLOCHL PE, UNPUB

[7] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[8] BAND OFFSETS IN TETRAHEDRAL SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1285-1289

[9] CORRECTION [J].

CARDONA, M .

PHYSICAL REVIEW B, 1987, 36 (05) :2906-2906

[10]

CHRISTENSEN NE, 1984, PHYS REV B, V30, P5753, DOI 10.1103/PhysRevB.30.5753

← 1 2 3 4 5 →