BORON-IMPLANTED 6H-SIC DIODES

被引：49

作者：

GHEZZO, M ^{[1
]}

BROWN, DM ^{[1
]}

DOWNEY, E ^{[1
]}

KRETCHMER, J ^{[1
]}

KOPANSKI, JJ ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL, GAITHERSBURG, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion implanted planar p-n junctions are important for silicon carbide discrete devices and integrated circuits. Conversion to p-type of n-type 6H-SiC was observed for the first time using boron implantation. Diodes were fabricated with boron implants at 25 and 1000-degrees-C, followed by 1300-degrees-C post-implant annealing in a furnace. The best diodes measured at 21-degrees-C exhibited an ideality factor of 1.77, reverse bias leakage of 10(-10) A/cm2 at -10 V, and a record high (for a SiC-implanted diode) breakdown voltage of -650 V.

引用

页码：1206 / 1208

页数：3

共 24 条

[1]

ANIKIN MM, 1985, SOV PHYS SEMICOND+, V19, P69

[2]

ANIKIN MM, 1992, SPRINGER P PHYSICS, V56, P283

[3] BEHAVIOR OF ION-IMPLANTED JUNCTION DIODES IN 3C SIC [J].