INTERFACE STRUCTURE AND MISFIT DISLOCATIONS IN THIN CU FILMS ON RU(0001)

被引：104

作者：

POTSCHKE, GO

BEHM, RJ

机构：

[1] Institut für Kristallographie und Mineralogie, Universität München, W-8000 München 2

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.44.1442

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show, from scanning tunneling microscopy measurements, that the strain at the interface between Cu films and a Ru(0001) substrate is reduced by a structural transformation from a more tightly bound, strained pseudomorphic first Cu layer to a unidirectionally contracted second Cu layer with periodic partial misfit dislocations. These results for a two-dimensional structure confirm the mechanism of stress accommodation in strained layers predicted in the one-dimensional dislocation model of Frank and van der Merwe.

引用

页码：1442 / 1445

页数：4

共 14 条

[1] SCANNING TUNNELING MICROSCOPY OBSERVATIONS ON THE RECONSTRUCTED AU(111) SURFACE - ATOMIC-STRUCTURE, LONG-RANGE SUPERSTRUCTURE, ROTATIONAL DOMAINS, AND SURFACE-DEFECTS [J].