MILLIMETER-WAVE PERFORMANCE OF STATE-OF-THE-ART MESFET, MODFET AND PBT TRANSISTORS

[1] 18.5-DB GAIN AT 18-GHZ WITH A GAAS PERMEABLE BASE TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 456 - 458

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[3] MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 531 - 533

[4] HIGH-FREQUENCY LIMITATIONS OF ABRUPT-JUNCTION FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 779 - 792

[5] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[6] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[7] MAKI DW, 1984, 1984 IEEE MICR MILL, P62

[8] MODFET ENSEMBLE MONTE-CARLO MODEL INCLUDING THE QUASI-2-DIMENSIONAL ELECTRON-GAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 677 - 681

[9] HIGH-FREQUENCY LIMITS OF MILLIMETER-WAVE TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 640 - 642

[10] TWO-DIMENSIONAL SIMULATION OF MODFET AND GAAS GATE HETEROJUNCTION FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1817 - 1823

[1] 18.5-DB GAIN AT 18-GHZ WITH A GAAS PERMEABLE BASE TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 456 - 458

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[3] MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 531 - 533

[4] HIGH-FREQUENCY LIMITATIONS OF ABRUPT-JUNCTION FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) : 779 - 792

[5] FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[6] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330

[7] MAKI DW, 1984, 1984 IEEE MICR MILL, P62

[8] MODFET ENSEMBLE MONTE-CARLO MODEL INCLUDING THE QUASI-2-DIMENSIONAL ELECTRON-GAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 677 - 681

[9] HIGH-FREQUENCY LIMITS OF MILLIMETER-WAVE TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 640 - 642

[10] TWO-DIMENSIONAL SIMULATION OF MODFET AND GAAS GATE HETEROJUNCTION FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1817 - 1823