TITANIUM SILICON AND SILICON DIOXIDE REACTIONS CONTROLLED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING

被引：25

作者：

BRILLSON, LJ ^{[1
]}

SLADE, ML ^{[1
]}

RICHTER, HW ^{[1
]}

VANDERPLAS, H ^{[1
]}

FULKS, RT ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573772

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：993 / 997

页数：5

共 24 条

[1] GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS [J].

BENTINI, GG ;

NIPOTI, R ;

ARMIGLIATO, A ;

BERTI, M ;

DRIGO, AV ;

COHEN, C .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :270-275

[2] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM [J].

BERTI, M ;

DRIGO, AV ;

COHEN, C ;

SIEJKA, J ;

BENTINI, GG ;

NIPOTI, R ;

GUERRI, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3558-3565

[3] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].

BEYERS, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152

[4] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J].

BEYERS, R ;

SINCLAIR, R ;

THOMAS, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :781-784

[5] REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING [J].

BRILLSON, LJ ;

SLADE, ML ;

KATNANI, AD ;

KELLY, M ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :110-112

[6] SURFACE SEGREGATION IN CU-NI AND CU-PT ALLOYS - COMPARISON OF LOW-ENERGY ION-SCATTERING RESULTS WITH THEORY [J].

BRONGERSMA, HH ;

SPARNAAY, MJ ;

BUCK, TM .

SURFACE SCIENCE, 1978, 71 (03) :657-678

[7] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].

BUTZ, R ;

RUBLOFF, GW ;

TAN, TY ;

HO, PS .

PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429

[8] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].

BUTZ, R ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775

[9] TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J].

CHOW, TP ;

KATZ, W ;

SMITH, G .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :41-43

[10] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

RUSSO, CJ ;

HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

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