ELECTRICAL-PROPERTIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITED GAAS EPITAXIAL LAYERS - TEMPERATURE-DEPENDENCE

被引：36

作者：

REEP, DH ^{[1
]}

GHANDHI, SK ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期

关键词：

D O I：

10.1149/1.2115386

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2697 / 2702

页数：6

共 17 条

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[3] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD
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[4] BASS SJ, 1977, I PHYSICS C SERIES, P1
[5] VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 246 - 254
[7] MOCVD GROWTH AND CHARACTERIZATION OF GAALAS-GAAS DOUBLE HETEROSTRUCTURES FOR OPTO-ELECTRONIC DEVICES
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 223 - 228
[8] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 613 - 626
[9] PYROLYSIS OF TRIMETHYL GALLIUM
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[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06): : 1560 - &
[10] CALCULATIONS OF POINT DEFECT CONCENTRATIONS AND NONSTOICHIOMETRY IN GAAS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1739 - &

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