MICROSTRIP DETECTORS WITH INVERTED STRUCTURE FOR HARDENING AGAINST RADIATION-DAMAGE

被引：2
作者：
LEROSE, S
PONS, D
FONNE, C
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 01期
关键词：
D O I：
10.1109/TNS.1986.4337116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：347 / 350
页数：4
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