ALGAAS/GE/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

STRITE, S ^{[1
]}

UNLU, MS ^{[1
]}

ADOMI, K ^{[1
]}

GAO, GB ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

基金：

美国国家科学基金会;

关键词：

Germanium and Alloys - Molecular Beam Epitaxy - Semiconducting Gallium Arsenide;

D O I：

10.1109/55.55260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first N-Al0.22Ga0.78As emitter, p-Ge base, and n-GaAs collector (AIGaAs/Ge/GaAs) heterojunction bipolar transistor (HBT) has been grown by molecular beam epitaxy. Devices exhibited common-emitter current gains of as high as 300 at a collector current density of 2000 A/cm2 and a collector voltage of 4 V. As the device area is reduced from 50 × 50 to 10 × 40 µm, the current gain did not show significant changes, suggesting a low surface recombination velocity in the Ge base. © 1990 IEEE

引用

页码：233 / 235

页数：3

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