A PHENOMENOLOGICAL MODEL OF ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION

被引：29
|
作者：
CARTER, G
NOBES, MJ
机构：
[1] Department of Electronic and Electrical Engineering, University of Salford, Salford
来源：
JOURNAL OF MATERIALS RESEARCH | 1991年 / 6卷 / 10期
关键词：
D O I：
10.1557/JMR.1991.2103
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A simple phenomenological model is developed to explain, qualitatively, the observed temperature and ion flux dependences of either recrystallization or further amorphous growth of amorphous layers in semiconductors when exposed to ion irradiation. The model includes radiation assisted annealing processes and thermally modified amorphous zone production at the amorphous-crystal interface.
引用
收藏
页码：2103 / 2108
页数：6
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