CHEMICAL BEAM EPITAXY OF INP AND GAAS

被引：192

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.95075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1234 / 1236

页数：3

共 16 条

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[3] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].

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LUDOWISE, MJ ;

AEBI, V ;

MOON, RL .

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[5]

DUPUIS RD, 1983, ELECTROCHEM SOC, P175

[6]

KARLICEK RF, UNPUB

[7] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM [J].

KUO, CP ;

YUAN, JS ;

COHEN, RM ;

DUNN, J ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :550-552

[8] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J].

MANASEVI.HM ;

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[9]

NOAD JP, 1980, J ELECTRON MATER, V9, P607

[10] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2729-2733

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