QUASI-TEM SPECTRAL DOMAIN TECHNIQUE FOR MULTICONDUCTOR STRUCTURES WITH RECTANGULAR AND TRAPEZOIDAL CONDUCTOR CROSS-SECTIONS

被引：9

作者：

KOLLIPARA, RT

TRIPATHI, VK

机构：

[1] Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1990年 / 3卷 / 01期

关键词：

digital integrated circuits; MMIC; multiconductor lines; spectral domain techniques; thick microstrips;

D O I：

10.1002/mop.4650030103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient technique based on the quasi‐TEM spectral domain analysis is formulated to compute the characteristic parameters of multiconductor‐multilayered structures with finite thickness conductors having trapezoidal and rectangular cross sections. Computed results for typical single and coupled lines on alumina and GaAs substrates are presented and compared with results based on finite and boundary element techniques and measured data for the effective dielectric constant. Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company

引用

页码：4 / 6

页数：3

共 7 条

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