QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON

被引：270

作者：

BRODSKY, MH

FRISCH, MA

ZIEGLER, JF

LANFORD, WA

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] YALE UNIV,WRIGHT NUCL STRUCT LAB,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：561 / 563

页数：3

共 10 条

[1] DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J].

BRODSKY, MH .

THIN SOLID FILMS, 1977, 40 (JAN) :L23-L25

[2]

BRODSKY MH, UNPUBLISHED

[3] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].

CONNELL, GAN ;

PAWLIK, JR .

PHYSICAL REVIEW B, 1976, 13 (02) :787-804

[4]

FRISCH MA, 1975, 23RD P ANN C MASS SP, P561

[5]

KNIGHTS JC, 1976, AIP C P, V31, P296

[6] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS [J].

LANFORD, WA ;

TRAUTVETTER, HP ;

ZIEGLER, JF ;

KELLER, J .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :566-568

[7] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

PAUL, W ;

LEWIS, AJ ;

CONNELL, GAN ;

MOUSTAKAS, TD .

SOLID STATE COMMUNICATIONS, 1976, 20 (10) :969-972

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[10]

[No title captured]

← 1 →