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- [3] MECHANISM OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN HEAVILY DOPED GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1928 - &
- [5] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1496 - +
- [6] TUNNEL-EFFECT RADIATIVE RECOMBINATION IN P-N JUNCTIONS SOVIET PHYSICS JETP-USSR, 1967, 24 (05): : 869 - +
- [7] RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONS PHYSICA STATUS SOLIDI, 1969, 36 (01): : 311 - +
- [9] SPONTANEOUS RADIATIVE RECOMBINATION IN INP P-N JUNCTIONS IN CASE OF SMALL CURRENTS SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2703 - +