ELECTRONIC-TRANSITIONS IN CDTE UNDER PRESSURE

被引：22

作者：

PRAKASH, M ^{[1
]}

CHANDRASEKHAR, M ^{[1
]}

CHANDRASEKHAR, HR ^{[1
]}

MIOTKOWSKI, I ^{[1
]}

RAMDAS, AK ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.42.3586

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a photoluminescence study of CdTe:Sb at 5 and 15 K under hydrostatic pressures of 0 to 32 kbar. We determine the pressure coefficients of several electronic transitions: the neutral-acceptor-bound exciton A0X, its phonon replica A0X-LO, the electron-to-acceptor transition e-A0, its phonon replica (e-A0)-LO, and four donor-acceptor peaks. A nonlinear pressure behavior is found for the main exciton peak. The linear term is 7.60.2 meV/kbar. We find that the binding energies of the A0X and the bare acceptor change with pressure. This change influences acceptor-bound magnetic polaron binding energies in the Cd1-xMnxTe alloys. © 1990 The American Physical Society.

引用

页码：3586 / 3590

页数：5

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