ADSORPTION OF H2S, H2O AND O2 ON SI(111) SURFACES

被引：36

作者：

FUJIWARA, K ^{[1
]}

OGATA, H ^{[1
]}

NISHIJIMA, M ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,AMAGASAKI,HYOGO,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 09期

关键词：

D O I：

10.1016/0038-1098(77)90358-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：895 / 897

页数：3

共 9 条

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[3] PEROXY RADICAL MODEL FOR CHEMISORPTION OF O-2 ONTO SILICON SURFACES [J].

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[5] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].

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ROWE, JE .

PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957

[6] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].

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SURFACE SCIENCE, 1973, 38 (02) :433-454

[7] OXIDATION OF CLEAN GE AND SI SURFACES [J].

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[8] ADSORPTION OF OXYGEN ON A CLEAN SILICON SURFACE [J].

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[9]

PEARSE RWB, 1965, IDENTIFICATION MOLEC

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