116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer

被引:6
作者
Long Shanli [1 ]
Liu Yan [1 ]
He Kejun [1 ]
Tang Xinggang [1 ]
Chen Qian [2 ]
机构
[1] Huadong Photoelect Integrated Device Res Inst, Suzhou 215163, Peoples R China
[2] Nanjing Univ Sci & Technol, Nanjing 210094, Jiangsu, Peoples R China
关键词
in-circuit reprogrammable technique; MEMS accelerometer; modulation and demodulation; sensitivity of accelerometer;
D O I
10.1088/1674-4926/35/9/095004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit (ASIC) is fabricated in a 0.5 mu m one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is -116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5 x 2.5 mm(2) and the current is 3.5 mA.
引用
收藏
页数:5
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