DILATATION PART OF THE PHONON-ELECTRON INTERACTION AND PHONON CONDUCTIVITY OF LIGHTLY DOPED SILICON AND GERMANIUM

被引：3

作者：

ROY, MK ^{[1
]}

SOOD, KC ^{[1
]}

机构：

[1] UNIV CHITTAGONG,DEPT PHYS,CHITTAGONG,BANGLADESH

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.47.3126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nonspherical nature of the donor wave function is taken into account for the derivation of electron-phonon rates in Li-O-doped Si. It is also found that the nonzero dilatational part of the anisotropic (longitudinal) phonon-electron scattering cross section is capable of explaining the thermal conductivity beyond its maximum, both for Si and Ge doped with shallow donors.

引用

页码：3126 / 3131

页数：6

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