60 GHZ LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：6
作者：
DUH, KHG
CHAO, PC
SMITH, PM
LESTER, LF
LEE, BR
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 12期
关键词：
HEMT - HIGH-ELECTRON-MOBILITY TRANSISTORS - NOISE FIGURES - NOISE PERFORMED - TRANSCONDUCTANCE;
D O I：
10.1049/el:19860443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：647 / 649
页数：3
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