LATERAL POSITION CONTROL OF AN ELECTRON CHANNEL IN A SPLIT-GATE DEVICE

被引：70
作者：
GLAZMAN, LI
LARKIN, IA
机构：
[1] Sch. of Phys. and Astron., Minnesota Univ., Minneapolis, MN
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 01期
关键词：
D O I：
10.1088/0268-1242/6/1/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new mode of operation with a split-gate device has been studied theoretically. A simple model for quantitative description of the pinch-off voltage and channel position is proposed. Independent control of voltages applied to disconnected parts of a split gate enables the electron channel to be shifted laterally. The shift was calculated for both narrow and wide channels. The method can be used to study electron scatterers in the area defined by the slit in the gate.
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页码：32 / 35
页数：4
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