A REVIEW OF SILICON-ON-INSULATOR FORMATION BY OXYGEN ION-IMPLANTATION

被引：1

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作者：

PINIZZOTTO, RF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572453

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

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页码：597 / 598

页数：2

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