VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON

被引：28
作者：
CHANTRE, A
KECHOUANE, M
BOIS, D
机构：
来源：
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词：
D O I：
10.1016/0378-4363(83)90305-4
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：547 / 552
页数：6
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