SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE

被引：192

作者：

OEHRLEIN, GS

WILLIAMS, HL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：662 / 672

页数：11

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