THE NEUTRAL DIVACANCY IN SILICON

被引：15

作者：

SIEVERTS, EG ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,ALBANY,NY 12222

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 43卷 / 01期

关键词：

D O I：

10.1016/0038-1098(82)91149-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：41 / 46

页数：6

共 28 条

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[3]

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[4]

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[5]

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[6]

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[7]

de Wit J. G., 1975, Lattice Defects in Semiconductors, 1974, P178

[8] DIVACANCY IN SILICON - HYPERFINE INTERACTIONS FROM ELECTRON-NUCLEAR DOUBLE-RESONANCE MEASUREMENTS [J].

DEWIT, JG ;

SIEVERTS, EG ;

AMMERLAAN, CAJ .

PHYSICAL REVIEW B, 1976, 14 (08) :3494-3503

[9] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J].

EVWARAYE, AO ;

SUN, E .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3776-3780

[10]

HORNSTRA J, 1959, 3497 PHIL RES LAB RE

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