THE NEUTRAL DIVACANCY IN SILICON

被引:15
作者
SIEVERTS, EG [1 ]
CORBETT, JW [1 ]
机构
[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,ALBANY,NY 12222
关键词
D O I
10.1016/0038-1098(82)91149-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:41 / 46
页数:6
相关论文
共 28 条
[1]   ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON [J].
AMMERLAAN, CA ;
WATKINS, GD .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10) :3988-+
[2]   EXTENDED-HUCKEL-THEORY CALCULATIONS FOR POSITIVE DIVACANCY IN SILICON [J].
AMMERLAAN, CAJ ;
WOLFRAT, JC .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01) :85-94
[3]  
AMMERLAAN CAJ, 1979, RAD EFFECTS SEMICOND, P448
[4]  
BROSIOUS PR, 1979, DEFECTS RAD EFFECTS, P248
[5]  
Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031
[6]  
CORBETT JW, 1966, ELECTRON RAD DAMAGE, P82
[7]  
de Wit J. G., 1975, Lattice Defects in Semiconductors, 1974, P178
[8]   DIVACANCY IN SILICON - HYPERFINE INTERACTIONS FROM ELECTRON-NUCLEAR DOUBLE-RESONANCE MEASUREMENTS [J].
DEWIT, JG ;
SIEVERTS, EG ;
AMMERLAAN, CAJ .
PHYSICAL REVIEW B, 1976, 14 (08) :3494-3503
[9]   ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON [J].
EVWARAYE, AO ;
SUN, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3776-3780
[10]  
HORNSTRA J, 1959, 3497 PHIL RES LAB RE