EPITAXIAL NISI2 FORMATION BY PULSED ION-BEAM ANNEALING

被引：30

作者：

CHEN, LJ

HUNG, LS

MAYER, JW

BAGLIN, JEE

NERI, JM

HAMMER, DA

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,PLASMA STUDIES LAB,ITHACA,NY 14853

[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：595 / 597

页数：3

相关论文

共 14 条

[1] BAGLIN JEE, 1981, 5TH P INT C ION BEAM
[2] Chen L., UNPUB
[3] INTERFACIAL ORDER IN EPITAXIAL NISI2
CHIU, KCR
POATE, JM
FELDMAN, LC
DOHERTY, CJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547
[4] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS
CULLIS, AG
WEBBER, HC
POATE, JM
SIMONS, AL
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 320 - 322
[5] NUCLEATION AND MIGRATION OF HIGH ANGLE GRAIN-BOUNDARIES IN BILAYER FOILS .2. MIGRATION
GROVENOR, CRM
SMITH, DA
GORINGE, MJ
[J]. THIN SOLID FILMS, 1980, 74 (02) : 269 - 279
[6] ION-BEAM ANNEALING OF SEMICONDUCTORS
HODGSON, RT
BAGLIN, JEE
PAL, R
NERI, JM
HAMMER, DA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 187 - 189
[7] SOME FEATURES OF BEHAVIOR OF MISFIT DISLOCATIONS DURING DIFFUSION
MATTHEWS, JW
[J]. THIN SOLID FILMS, 1975, 25 (01) : 199 - 211
[8] RECRYSTALLIZATION AND INTERDIFFUSION IN THIN BIMETALLIC FILMS
MITTEMEIJER, EJ
BEERS, AM
[J]. THIN SOLID FILMS, 1980, 65 (01) : 125 - 135
[9] INTENSE LITHIUM, BORON, AND CARBON BEAMS FROM A MAGNETICALLY INSULATED DIODE
NERI, JM
HAMMER, DA
GINET, G
SUDAN, RN
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 101 - 103
[10] LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON
POATE, JM
LEAMY, HJ
SHENG, TT
CELLER, GK
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 918 - 920