SCANNING-TUNNELING-MICROSCOPY STUDIES OF SI DONORS (SI-GA) IN GAAS

被引：192

作者：

ZHENG, JF ^{[1
]}

LIU, X ^{[1
]}

NEWMAN, N ^{[1
]}

WEBER, ER ^{[1
]}

OGLETREE, DF ^{[1
]}

SALMERON, M ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DEPT MAT SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.72.1490

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report scanning tunneling microscopy (STM) studies of Si substitutional donors (Si(Ga)) in GaAs that reveal delocalized and localized electronic features corresponding to Si(Ga) in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in size, superimposed on the background lattice. These features are attributed to enhanced tunneling due to the local perturbation of the band bending by the Coulomb potential of subsurface Si(Ga). In contrast, STM images of surface Si(Ga) show very localized electronic structures, in good agreement with a recent theoretical prediction [J. Wang et al. Phys. Rev. B 47, 10 329 (1993)].

引用

页码：1490 / 1493

页数：4

共 15 条

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