BAND LINEUP AND INPLANE EFFECTIVE-MASS OF INGAASP OR INGAALAS ON INP STRAINED-LAYER QUANTUM-WELL

被引：113
作者：
ISHIKAWA, T
BOWERS, JE
机构：
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
[2] Furukawa Electric Co., Chiba
[3] Department of Electrical and Computer Engineering, University of California, Santa Barbara
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期
关键词：
D O I：
10.1109/3.283804
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe the band lineups of InGaAlAs on (001) InP as well as InGaAsP on (001) InP system with strain effects, based on the Harrison model. We show that the compressive strain does not affect the band position so much, and tensile strain raises the band position in the InGaAsP system. It is also shown that both compressive and tensile strains raise the band positions in the InGaAlAs system. The conduction and valence band positions of InGaAs, InGaAsP, and InGaAlAs relative to InP valence band are given in approximate formulas as a function of the strain. We calculate the energy versus in-plane wave vector relationship of the InGaAsP/InGaAs(P) on InP and InGaAlAs/InGa(Al)As on InP strained quantum-well systems. We obtain the in-plane effective mass of the strained quantum-well system by fitting the dispersion relationship to a parabolic curve. The in-plane effective masses of several kinds of strained quantum-well systems are listed.
引用
收藏
页码：562 / 570
页数：9
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