LOW-LOSS, SINGLE-MODE, OPTICAL-PHASE MODULATOR IN SIMOX MATERIAL

被引:82
|
作者
TANG, CK [2 ]
REED, GT
WALTON, AJ
RICKMAN, AG
机构
[1] UNIV EDINBURGH, DEPT ELECTR & ELECT ENGN, EDINBURGH, SCOTLAND
[2] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
[3] UNIV SURREY, DEPT PHYS, GUILDFORD GU2 5XH, SURREY, ENGLAND
关键词
D O I
10.1109/50.317527
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports results of the simulation of an optical phase modulator. The proposed modulator consists of an elongated p-i-n structure fabricated in a silicon-on-insulator material such as SIMOX. It utilizes the free-carrier effect to produce the desired refractive index change in a single-mode optical rib waveguide. The MEDICI two-dimensional semiconductor device simulation package has been employed to optimize the overlap between the injected free carriers and the propagating optical guided mode. Although the device is designed to support a single optical guided mode, it measures several micrometers in cross sectional dimensions, thereby simplifying fabrication and allowing efficient coupling to/from other single-mode devices. Furthermore, the device has an extremely high figure of merit, predicting over 200 degrees of induced phase shift per volt per millimeter, as well as a low drive current of less than 10 mA. This is approximately an order of magnitude lower than most other reported devices in silicon.
引用
收藏
页码:1394 / 1400
页数:7
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