DENSITY-OF-STATES FINE-STRUCTURE IN THE TUNNELING CONDUCTANCE OF Y-BA-CU-O FILMS - A COMPARISON BETWEEN EXPERIMENT AND THEORY

被引：31

作者：

MILLER, TG

MCELFRESH, M

REIFENBERGER, R

机构：

[1] Department of Physics, Purdue University, West Lafayette

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.48.7499

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With improved signal-averaging techniques, the tunneling conductance from pulsed-laser-deposited films of YBa2Cu3O7-delta reveals a rich fine structure in both the subgap and near-gap regions. A comparison of this structure with calculations by Tachiki et al. yields excellent agreement and indicates the origin of the fine structure is the density of electronic states on the different layered planes of this high-T(c) material.

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页码：7499 / 7504

页数：6

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