MOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXIAL-GROWTH OF INP USING POLYCRYSTALLINE INP AS PHOSPHORUS SOURCE

被引：12
作者：
YANG, BX [1 ]
HASEGAWA, H [1 ]
机构：
[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 02期
关键词：
MBE; MEE; INP; POLYCRYSTALLINE INP; PHOSPHORUS SOURCE; THERMAL CLEANING; X-RAY ROCKING CURVE;
D O I：
10.1143/JJAP.32.704
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InP was grown by means of molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) using polycrystalline InP as the phosphorus source. Pregrowth thermal cleaning of the InP substrate was performed under either P2-beam or As4-beam irradiation. It is shown that polycrystalline InP is a highly controllable and useful source of a P2 beam for MBE and MEE growth of high-quality InP in the standard MBE system. The As4 cleaning was found to be more controllable and reproducible than the P2 cleaning. Although the AS4 cleaning produced an ultrathin InAs interface layer, no inclusion of As was detected and no influence was found on the crystalline and electrical properties of the epilayer. Unintentionally doped layers showed n-type conduction with carrier concentration in the range of 5 X 10(16)-1 X 10(18) cm-3, showing a remarkable dependence on the growth temperature.
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页码：704 / 710
页数：7
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