PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON

被引：49

作者：

BERGHOLZ, W

HUTCHISON, JL

PIROUZ, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.335760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：3419 / 3424

页数：6

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