PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON

被引：49
作者：
BERGHOLZ, W
HUTCHISON, JL
PIROUZ, P
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 09期
关键词：
D O I：
10.1063/1.335760
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3419 / 3424
页数：6
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