AC CONDUCTION IN EVAPORATED MOO3/SIO AMORPHOUS THIN-FILMS

被引：10

作者：

ANWAR, M

HOGARTH, CA

机构：

[1] Department of Physics, Brunel University, Uxbridge, Middlesex

来源：

JOURNAL OF MATERIALS SCIENCE | 1990年 / 25卷 / 09期

关键词：

D O I：

10.1007/BF00582458

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric properties of vacuum-deposited MoO3/SiO films of different compositions studied in the frequency range 102 to 106 Hz at various temperatures (193 to 393 K) are reported. The properties of the film capacitor are found to be temperature and frequency dependent. The decrease in a.c. conductance with increasing concentration of SiO in MoO3 may be attributed to the increasing number of trapping centres generated in MoO3/SiO films during the evaporation process. © 1990 Chapman and Hall Ltd.

引用

页码：3906 / 3909

页数：4

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