LOW-RESISTIVITY P-TYPE ZNSE THROUGH SURFACE FERMI LEVEL ENGINEERING

被引：13

作者：

WOODALL, JM ^{[1
]}

HODGSON, RT ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV, SCH ELECT ENGN, W LAFAYETTE, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-resistivity p-type ZnSe is difficult to make. This has been associated with the equilibrium thermodynamics of self-compensation of the p-type dopant by donor-like Se vacancies. We suggest that the bulk Se vacancy concentration can be vastly reduced by positioning the surface Fermi level near the conduction-band edge during the low-temperature epitaxial growth of p-doped ZnSe. This procedure is expected to minimize the equilibrium Se vacancy concentration at the surface, leading to a much lower than equilibrium Se vacancy concentration in the bulk. Experiments which could test this concept include liquid phase epitaxy growth of ZnSe from As or Li doped low work function melts such as Sn, and As doping during molecular beam epitaxy growth of ZnSe on (111)A surfaces.

引用

页码：379 / 381

页数：3

共 15 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].

BHARGAVA, RN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26

[2] SELF-COMPENSATION THROUGH A LARGE LATTICE-RELAXATION IN P-TYPE ZNSE [J].

CHADI, DJ ;

CHANG, KJ .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :575-577

[3] METAL (100)GAAS INTERFACE - CASE FOR A METAL-INSULATOR-SEMICONDUCTOR-LIKE STRUCTURE [J].

FREEOUF, JL ;

WOODALL, JM ;

BRILLSON, LJ ;

VITURRO, RE .

APPLIED PHYSICS LETTERS, 1990, 56 (01) :69-71

[4] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[5] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

KIRCHNER, PD ;

JACKSON, TN ;

PETTIT, GD ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :26-28

[6] SHALLOW ACCEPTORS AND P-TYPE ZNSE [J].

KOSAI, K ;

FITZPATRICK, BJ ;

GRIMMEISS, HG ;

BHARGAVA, RN ;

NEUMARK, GF .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :194-196

[7] SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J].

MANDEL, G .

PHYSICAL REVIEW, 1964, 134 (4A) :1073-+

[8]

MICHAELSON H, 1978, CRC HDB PHYSICS CHEM

[9] NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

OHKI, A ;

SHIBATA, N ;

ZEMBUTSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05) :L909-L912

[10] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J].

RUPPRECHT, H ;

WOODALL, JM ;

KONNERTH, K ;

PETTIT, DG .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :221-+

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