KINETICS OF REACTION AT ROOM-TEMPERATURE IN THIN SILVER METAL COUPLES

被引：25
作者：
MARINKOVIC, Z
SIMIC, V
机构：
来源：
THIN SOLID FILMS | 1991年 / 195卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(91)90265-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The reaction kinetics of compound formation at room temperature in thin film Ag-Me (Me = Ga, In, Sn, Te) couples have been investigated by X-ray diffraction. The decrease in the diffraction peak of silver or the metal, or the increase in the diffraction peak of the corresponding compound, have been followed as a function of time. The rate of compound formation has been found to increase as the melting points of the metal and of the compound formed decrease.
引用
收藏
页码：127 / 135
页数：9
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