III-V STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH-SPEED DEVICES

被引：3
作者：
MILLER, DL
机构：
[1] Rockwell Int Microelectronics, Research & Development Cent,, Thousand Oaks, CA, USA, Rockwell Int Microelectronics Research & Development Cent, Thousand Oaks, CA, USA
来源：
THIN SOLID FILMS | 1984年 / 118卷 / 02期
关键词：
The author wishes to thank Professor Herbert Kroemer; Dr. P. M. Asbeck and Dr. C. P. Lee for helpful discussions in the preparation of this manuscript and to thank Rockwell International Microelectronics Research and Development Center for providing the stimulating environment in which it was written;
D O I：
10.1016/0040-6090(84)90063-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
50
引用
收藏
页码：117 / 127
页数：11
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