CAPACITANCE OF P-N JUNCTIONS - SPACE-CHARGE CAPACITANCE

被引:32
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CHANG, YF
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10.1063/1.1708814
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O59 [应用物理学];
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页码:2337 / &
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共 20 条
[1]  
ANGELLO SJ, 1949, ELECTRON ENG, V68, P865
[2]  
CHANG JJ, PRIVATE COMMUNICATIO
[3]   CALCULATIONS ON THE SHAPE AND EXTENT OF SPACE CHARGE REGIONS IN SEMICONDUCTOR SURFACES [J].
DOUSMANIS, GC ;
DUNCAN, RC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1627-1629
[4]  
Fletcher N.H., 1957, J ELECT, V2, P609, DOI [10.1080/00207215708937064, DOI 10.1080/00207215708937064]
[5]  
GRAY PE, 1964, PHYSICAL ELECTRONICS
[6]   POWER RECTIFIERS AND TRANSISTORS [J].
HALL, RN .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518
[7]   CHARACTERISTICS OF JUNCTIONS IN GERMANIUM [J].
HARRICK, NJ .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) :764-770
[8]  
Joffe J., 1945, ELECTRON COMMUN ENG, V22, P217
[9]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[10]  
MOLL JL, 1964, PHYSICS SEMICONDUCTO, P136