AN AS-P(N+-N-) DOUBLE DIFFUSED DRAIN MOSFET FOR VLSIS

被引：50

作者：

TAKEDA, E ^{[1
]}

KUME, H ^{[1
]}

NAKAGOME, Y ^{[1
]}

MAKINO, T ^{[1
]}

SHIMIZU, A ^{[1
]}

ASAI, S ^{[1
]}

机构：

[1] HITACHI MICROCOMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/T-ED.1983.21184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：652 / 657

页数：6

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