RATES OF FORMATION OF THERMAL OXIDES OF SILICON

被引：0
作者：
DONOVAN, RP
EVITTS, HC
COOPER, HW
FLASCHEN, SS
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 12期
关键词：
D O I：
10.1149/1.2426039
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1442 / 1442
页数：1
相关论文
共 50 条
  • [41] Effect of thermal annealing on structure and photoluminescence properties of silicon-rich silicon oxides
    Zhigunov, D. M.
    Seminogov, V. N.
    Timoshenko, V. Yu.
    Sokolov, V. I.
    Glebov, V. N.
    Malyutin, A. M.
    Maslova, N. E.
    Shalygina, O. A.
    Dyakov, S. A.
    Akhmanov, A. S.
    Panchenko, V. Ya.
    Kashkarov, P. K.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06) : 1006 - 1009
  • [42] Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors
    Ezhovskii Y.K.
    Russian Microelectronics, 2019, 48 (02) : 80 - 84
  • [43] ELECTRON THERMAL EMISSION RATES OF NICKEL CENTERS IN SILICON
    JARAIZ, M
    DUENAS, S
    VICENTE, J
    BAILON, L
    BARBOLLA, J
    SOLID-STATE ELECTRONICS, 1986, 29 (09) : 883 - 884
  • [44] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
    SAH, CT
    FORBES, L
    ROSIER, LI
    TASCH, AF
    TOLE, AB
    APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +
  • [45] Oxygen precipitates and the formation of thermal donors in silicon
    N. V. Vabishchevich
    D. I. Brinkevich
    V. S. Prosolovich
    Semiconductors, 1998, 32 : 640 - 641
  • [46] FORMATION KINETICS OF OXYGEN THERMAL DONORS IN SILICON
    WIJARANAKULA, W
    APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1608 - 1610
  • [47] HYDROGEN ENHANCEMENT OF SILICON THERMAL DONOR FORMATION
    LAMP, CD
    JAMES, DJ
    APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2081 - 2083
  • [48] INFLUENCE OF GERMANIUM ON THE FORMATION OF THERMAL DONORS IN SILICON
    DASHEVSKII, MY
    DOKUCHAEVA, AA
    ANISIMOV, KI
    INORGANIC MATERIALS, 1986, 22 (10) : 1401 - 1403
  • [49] Oxygen precipitates and the formation of thermal donors in silicon
    Vabishchevich, NV
    Brinkevich, DI
    Prosolovich, VS
    SEMICONDUCTORS, 1998, 32 (06) : 640 - 641
  • [50] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON
    GOSELE, U
    TAN, TY
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92
12345