RATES OF FORMATION OF THERMAL OXIDES OF SILICON

被引：0
作者：
DONOVAN, RP
EVITTS, HC
COOPER, HW
FLASCHEN, SS
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 12期
关键词：
D O I：
10.1149/1.2426039
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：1442 / 1442
页数：1
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