共 50 条
[41]
Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires
[J].
11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11),
2010, 210
[42]
Surface Plasmon Polariton Photoluminescence Enhancement of Single InP Nanowires with InAsP Quantum Wells
[J].
Physica Status Solidi - Rapid Research Letters,
2025, 19 (04)
[43]
Surface Plasmon Polariton Photoluminescence Enhancement of Single InP Nanowires with InAsP Quantum Wells
[J].
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,
2025, 19 (04)
[44]
EFFECT OF SURFACE RECOMBINATION ON THE CONTRAST OF PHOTOLUMINESCENCE IMAGES OBTAINED ON LEC GAAS AND INP CRYSTALS
[J].
SEMI-INSULATING III-V MATERIALS, MALMO 1988,
1988,
:555-560
[46]
Characterization of SiOx/Si/SiOx coated n-InP facets of semiconductor lasers using spatially-resolved photoluminescence
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2005, 44 (11)
:8007-8009
[47]
The photoluminescence studies of high purity InP
[J].
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS,
2002,
:177-180
[50]
DIFFUSION AND PHOTOLUMINESCENCE OF ERBIUM IN GAAS AND INP
[J].
INSTITUTE OF PHYSICS CONFERENCE SERIES,
1989, (96)
:277-282