SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE

被引：63
作者：
CHANG, RR
IYER, R
LILE, DL
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期
关键词：
D O I：
10.1063/1.337995
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1995 / 2004
页数：10
相关论文
共 50 条
[31]   SPATIALLY RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF FE DOPED SEMI-INSULATING INP [J].
ERMAN, M ;
GILLARDIN, G ;
LEBRIS, J ;
RENAUD, M ;
TOMZIG, E .
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 :78-85
[32]   Characterization of InP:Zn layers by photoluminescence and photoelectrochemical C-V profiling [J].
Andrievski, VF ;
Gushchinskaya, EV ;
Emelyanenko, YS ;
Malyshev, SA .
HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 :147-150
[33]   Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence [J].
Lakshmi, B ;
Robinson, BJ ;
Cassidy, DT ;
Thompson, DA .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3616-3620
[34]   Effect of the characteristics of InP substrates on photoluminescence spectra of InP based epitaxial layers and surface temperature during epitaxial growth [J].
Nakamura, M ;
Hirano, R ;
Shimizu, E ;
Ohta, M ;
Kawabe, M .
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, :155-158
[35]   OBSERVATION OF DISLOCATION STRESSES IN INP USING POLARIZATION-RESOLVED PHOTOLUMINESCENCE [J].
COLBOURNE, PD ;
CASSIDY, DT .
APPLIED PHYSICS LETTERS, 1992, 61 (10) :1174-1176
[36]   Assessing the Performance of Surface Passivation Using Low-Intensity Photoluminescence Characterization Techniques [J].
Chan, Catherine E. ;
Abbott, Malcolm D. ;
Juhl, Mattias K. ;
Hallam, Brett J. ;
Xiao, Bo ;
Wenham, Stuart R. .
IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (01) :100-106
[37]   Characterization of surface damage in dry-etched InP [J].
Iber, H ;
Mo, S ;
Peiner, E ;
Vollrath, G ;
Schlachetzki, A ;
Fiedler, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (06) :755-759
[38]   CHARACTERIZATION OF SURFACE-STATES AT THE INP LIQUID INTERFACE [J].
GOODMAN, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :C5-C8
[39]   STUDIES OF PHOTOLUMINESCENCE INTENSITY IN THE INP INGAASP INP DOUBLE HETEROSTRUCTURE [J].
KOMIYA, S ;
YAMAGUCHI, A ;
UMEBU, I ;
KOTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03) :308-311
[40]   Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires [J].
Donchev, V. ;
Ivanov, Ts ;
Angelova, T. ;
Cros, A. ;
Cantarero, A. ;
Shtinkov, N. ;
Borisov, K. ;
Fuster, D. ;
Gonzalez, Y. ;
Gonzalez, L. .
11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
12345