SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE

被引：63
作者：
CHANG, RR
IYER, R
LILE, DL
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期
关键词：
D O I：
10.1063/1.337995
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1995 / 2004
页数：10
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共 34 条
[1]   SURFACE BAND BENDING EFFECTS ON PHOTO-LUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODES [J].
ANDO, K ;
YAMAMOTO, A ;
YAMAGUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) :1107-1112
[2]   RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].
ASPNES, DE .
SURFACE SCIENCE, 1983, 132 (1-3) :406-421
[3]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[4]  
CHANG R, UNPUB
[5]   EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].
FARROW, RFC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2436-2448
[6]   PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS [J].
FRY, KL ;
KUO, CP ;
COHEN, RM ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :955-957
[7]   OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J].
HWANG, CJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3731-&
[8]   THE ANODIZED AL-INP INTERFACE [J].
HWANG, T ;
CHANG, RR ;
GEIB, KM ;
WILMSEN, CW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1018-1021
[9]  
IYER R, IN PRESS J ELECTROCH
[10]   LUMINESCENCE STUDY OF RAPID LAMP ANNEALING OF SI-IMPLANTED INP [J].
KIRILLOV, D ;
MERZ, JL ;
KALISH, R ;
SHATAS, S .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :531-536
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