PD-SI SCHOTTKY DIODES AS HYDROGEN SENSING DEVICES - CAPACITANCE-VOLTAGE CHARACTERISTICS

被引：23

作者：

DILIGENTI, A

STAGI, M

CIUTI, V

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 04期

关键词：

D O I：

10.1016/0038-1098(83)90893-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：347 / 350

页数：4

共 13 条

[1] AUTOMATIC-MEASUREMENT SYSTEM OF BARRIER HEIGHTS OF METAL-SEMICONDUCTOR CONTACTS DURING THERMAL TREATMENTS [J].

DILIGENTI, A ;

TERRENI, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (12) :1441-1444

[2] PD-THIN-SIO2-SI DIODE .1. ISOTHERMAL VARIATION OF H2-INDUCED INTERFACIAL TRAPPING STATES [J].

KERAMATI, B ;

ZEMEL, JN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1091-1099

[3] PD-THIN-SIO2-SI DIODE .2. THEORETICAL MODELING AND THE H-2 RESPONSE [J].

KERAMATI, B ;

ZEMEL, JN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1100-1109

[4] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].

LUNDSTROM, KI ;

SHIVARAMAN, MS ;

SVENSSON, CM .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3876-3881

[5] TRANSITION METAL-GATE MOS GASEOUS DETECTORS [J].

POTEAT, TL ;

LALEVIC, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :123-129

[6]

RHODERICK EH, 1980, METAL SEMICONDUCTOR, P53

[7] A STUDY OF PD-SI MIS SCHOTTKY-BARRIER DIODE HYDROGEN DETECTOR [J].

RUTHS, PF ;

ASHOK, S ;

FONASH, SJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1003-1009

[8] HYDROGEN SENSITIVITY OF PALLADIUM-THIN-OXIDE-SILICON SCHOTTKY BARRIERS [J].

SHIVARAMAN, MS ;

LUNDSTROM, I ;

SVENSSON, C ;

HAMMARSTEN, H .

ELECTRONICS LETTERS, 1976, 12 (18) :483-484

[9] PALLADIUM-CADMIUM-SULFIDE SCHOTTKY DIODES FOR HYDROGEN DETECTION [J].

STEELE, MC ;

MACIVER, BA .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :687-688

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P374

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