TEM INVESTIGATION OF ION-BEAM SYNTHESIZED SEMICONDUCTING FESI2

被引：9

作者：

YANG, Z

HOMEWOOD, KP

REESON, KJ

FINNEY, MS

HARRY, MA

机构：

[1] Department of Electrical and Electronic Engineering, University of Surrey, Guildford

来源：

MATERIALS LETTERS | 1995年 / 23卷 / 4-6期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/0167-577X(95)00049-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Both as-implanted and annealed semiconducting FeSi2 samples fabricated using ion beam synthesis technique were studied by transmission electron microscopy. A continuous buried silicide layer with larger precipitates and sharper interfaces formed during annealing at 900 degrees C for 18 h. Different orientation relationships between the silicide grains and the silicon substrate were found. The existence of a large variety of parallel lattice plane pairs with the available small mismatches between the two phases results in these preferred orientation relationships.

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页码：215 / 220

页数：6

相关论文

共 11 条

[1] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703

[2] SYNTHESIS AND PROPERTIES OF EPITAXIAL SEMICONDUCTING SILICIDES [J].

DERRIEN, J ;

CHEVRIER, J ;

VINH, LT ;

BERBEZIER, I ;

GIANNINI, C ;

LAGOMARSINO, S ;

GRIMALDI, MG .

APPLIED SURFACE SCIENCE, 1993, 73 :90-101

[3]

DIRMITRIADIS CA, 1990, J APPL PHYS, V68, P1726

[4]

Dusausoy P Y., 1971, ACTA CRYSTALLOGR B, V27, P1209, DOI [10.1107/S0567740871003765, DOI 10.1107/S0567740871003765]

[5] STRUCTURAL-PROPERTIES OF ION-BEAM-SYNTHESIZED BETA-FESI2 IN SI(111) [J].

GERTHSEN, D ;

RADERMACHER, K ;

DIEKER, C ;

MANTL, S .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) :3788-3794

[6] ION-BEAM SYNTHESIS OF ALPHA AND BETA FESI2 LAYERS [J].

HUNT, TD ;

SEALY, BJ ;

REESON, KJ ;

GWILLIAM, RM ;

HOMEWOOD, KP ;

WILSON, RJ ;

MEEKISON, CD ;

BOOKER, GR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2) :60-64

[7] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J].

LAU, SS ;

FENG, JSY ;

OLOWOLAFE, JO ;

NICOLET, MA .

THIN SOLID FILMS, 1975, 25 (02) :415-422

[8] ION-BEAM SYNTHESIS OF BURIED METALLIC AND SEMICONDUCTING SILICIDES [J].

MANTL, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :895-900

[9] ALLOTAXIAL GROWTH OF EPITAXIAL SI/FESI2,/SI HETEROSTRUCTURES [J].

MULLER, O ;

MANTL, S ;

RADERMACHER, K ;

BAY, HL ;

CRECELIUS, G ;

DIEKER, C ;

MESTERS, S .

APPLIED SURFACE SCIENCE, 1993, 73 :141-145

[10] ION-BEAM SYNTHESIS OF A SI/BETA-FESI2/SI HETEROSTRUCTURE [J].

OOSTRA, DJ ;

VANDENHOUDT, DEW ;

BULLELIEUWMA, CWT ;

NABURGH, EP .

APPLIED PHYSICS LETTERS, 1991, 59 (14) :1737-1739